Gain limiting processes in Er-doped Si nanocrystal waveguides in SiO2
نویسندگان
چکیده
Erbium-doped Si nanocrystal based optical waveguides were formed by Er and Si ion implantation into SiO2 . Optical images of the waveguide output facet show a single, well-confined optical mode. Transmission measurements reveal a clear Er related absorption of 2.7 dB/cm at 1.532 mm, corresponding to a cross section of 8310 cm. The Si nanocrystals act as sensitizers for Er but under high doping conditions ~;50 Er ions per nanocrystals! no pump-induced change in the Er related absorption is observed under optical pumping ~l5458 nm!, which is ascribed to an Auger quenching effect. For very high pump powers, a broad absorption feature is observed, attributed to free carrier absorption. © 2002 American Institute of Physics. @DOI: 10.1063/1.1418417#
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